Spatial control of lifetime in semiconductor device

Details Spatial control of lifetime in semiconductor device Spatial control of lifetime in semiconductor device

1974-05-28

1976-10-26

Wojciechowicz, Edward J.

357 60, 357 37, 357 88, H01L 29167, H01L 2900, H01L 2904

Patent

active

039887715

ABSTRACT:
Deep level impurities such, for example, as gold, platinum, silver, nickel and copper, are introduced into selected regions of semiconductor devices by directional solidification to reduce the charge recombination lifetime and therefore the turn-off time of the device.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3461359 (1969-08-01), Raithel et al.
patent: 3513367 (1970-05-01), Wolley
patent: 3727116 (1973-04-01), Thomas et al.
patent: 3775196 (1973-11-01), Wakamiya et al.

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