Method for manufacturing electrostatic discharge devices

Fishing – trapping – and vermin destroying

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437 51, 437192, 437193, 257355, H01L 2170, H01L 2700, H01L 2144, H01L 2302

Patent

active

055167179

ABSTRACT:
A method for manufacturing electrostatic discharge (ESD) devices on a silicon substrate. The method is consistent with fabricating an integrated circuit having a buried contact structure. By modifying photolithographic masks, the ESD device and the buried contact are formed on the silicon substrate at the same time. Without any extra processing steps, the manufacturing of the ESD device is simplified thus reducing the manufacturing cost.

REFERENCES:
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patent: 4992844 (1991-02-01), Yakushiji
patent: 5087579 (1992-02-01), Tomassetti
patent: 5248892 (1993-09-01), Van Roozendaal et al.
patent: 5364801 (1994-11-01), Smayling et al.
patent: 5449939 (1995-09-01), Horiguchi et al.

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