Integrated circuit fabrication process for preventing overproces

Details Integrated circuit fabrication process for preventing overproces Integrated circuit fabrication process for preventing overproces

1990-07-24

1992-04-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 437174, 148DIG93, H01L 21268, H01L 21428

Patent

active

051028301

ABSTRACT:
A process for preventing overprocessing of an (IC) wafer or the like in an area of laser overlap. The invention in general comprises a process in which the surface of an (IC) wafer is coated with a composition which forms a light reflective surface upon the application of laser energy. Laser energy is thus reflected away from the wafer in areas of multiple laser exposure. In a preferred embodiment of the invention an (IC) wafer is coated with a nitrogen deficient titanium nitride film, which reacts with oxygen in the laser process chamber, to form a highly reflective titanium oxide film.

REFERENCES:
patent: 4476375 (1984-10-01), Ogawa
patent: 4509161 (1985-04-01), Van de Leest et al.
S. P. Murarka, "Refractory Silicide for Integrated Circuits", J. Vac. Sci. Techol, 17(4), Jul./Aug. 1980, pp. 775-790.
Liu, Cheung, Lai, Heim, "A Study of Pulsed Laser Planarization of Aluminum for VLSI Metallization" Technical Article.
Shibata et al., "Metal Silicon Reactions Induced by CW Scanned Laser and Electron Beams", Tech. Art. Stanford Electronics Labs.

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