Gallium arsenide static induction transistor

Details Gallium arsenide static induction transistor Gallium arsenide static induction transistor

1982-04-19

1984-09-04

Edlow, Martin H.

357 234, 357 56, H01L 2980

Patent

active

044700598

ABSTRACT:
A gallium arsenide static induction transistor of normally-off type simple in manufacture and exhibiting a superior function and suitable for use in low and medium power operation in integrated circuit is obtained by arranging so that its channel region has a length l (.mu.m), a width (.mu.m) and an impurity concentration N (cm.sup.-3), and that the ratio l/w is 0.5-5.0 and that the product Nw.sup.2 is not larger than 2.5.times.10.sup.15 cm.sup.-3..mu.m.sup.2.

REFERENCES:
patent: Re29971 (1972-05-01), Nishizawa
patent: 4216029 (1980-08-01), Ohki
patent: 4284997 (1978-06-01), Nishizawa
Sze, "Physics of Semiconductors", p. 89, J. Wiley & Sons, N.Y. 1969.

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