Method for controlling the switching speed of bipolar power devi

Details Method for controlling the switching speed of bipolar power devi Method for controlling the switching speed of bipolar power devi

1991-04-11

1992-04-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 94, 437110, 437131, 437132, 148DIG60, 148DIG11, H01L 21265

Patent

active

051028107

ABSTRACT:
The switching speed of bipolar power rectifiers is increased by formation of misfit dislocations in the depletion region, spaced from the substrate/epitaxial layer interface, in order to reduce minority carrier lifetime. The misfit dislocations are formed by the introduction of germanium during epitaxy, and are distributed along the silicon/silicon-germanium interface. Preferably, the germanium containing layer is located proximate the center of the depletion region.

REFERENCES:
patent: 4053925 (1977-10-01), Burr et al.
patent: 4177477 (1979-12-01), Hokuyo et al.
patent: 4717681 (1988-01-01), Curran
patent: 4771013 (1988-09-01), Curran
patent: 4962051 (1990-10-01), Liaw
patent: 5006912 (1991-04-01), Smith et al.
patent: 5021360 (1991-06-01), Melman et al.

Affiliated with

Also associated with

Rating

Method for controlling the switching speed of bipolar power devi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for controlling the switching speed of bipolar power devi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for controlling the switching speed of bipolar power devi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1894842