Semiconductor device

Details Semiconductor device Semiconductor device

1988-03-28

1990-07-03

Hille, Rolf

357 38, 357 86, H01L 29747, H01L 2974

Patent

active

049395653

ABSTRACT:
Upper structure (911) of a bidirectional triode thyristor has a first base layer (21) and a gate portion base layer (22) which are isolated from each other by a first isolation (1a). A first emitter layer (4) is formed in a part of a surface of the first base layer (21). A gate portion emitter layer (10) is formed in a part of a surface of the gate portion base layer (22). First main electrodes (T.sub.1, 61, 62) are formed on surfaces of the first emitter layer (4) and the gate portion base layer (22), respectively. Gate electrodes T.sub.G, 91, 92) are formed on surfaces of the gate portion emitter layer (10) and the first base layer (4), respectively. Lower structure (922) has a second base layer (31) and a third base layer (32) which are isolated from each other by a second isolation layer (1c). A second emitter layer (5) is formed in a part of a surface of the first base layer (31). Second electrodes (T.sub.2, 7a) are electrically and directly in contact with only surfaces of the second emitter layer (5) and the second base layer (32).

REFERENCES:
patent: 3524114 (1970-08-01), Hutson

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