MOS Power transistor with improved high-voltage capability

Details MOS Power transistor with improved high-voltage capability MOS Power transistor with improved high-voltage capability

1980-04-14

1982-08-17

Edlow, Martin H.

357 41, 357 52, H01L 2978

Patent

active

043452655

ABSTRACT:
Device means for reducing latch-back breakdown thus raising the reverse-biased power capability of a DMOS transistor or the like. A DMOS transistor is an MOS field effect transistor comprising a lightly-doped (usually diffused) body region formed in a drain region; a heavily-doped source region is located in the body region in proximity to the drain. Since such a device structure also exhibits substantial bipolar transistor action, it is prone to latch-back breakdown. Means for reducing latch-back breakdown include providing a distributed diode with a lower breakdown voltage than the DMOS transistor to non-destructively absorb reverse transients or by providing shunt conductance means for the diffused channel region to reduce both the voltage and the voltage gradient in the base of the parasitic bipolar device. These means may be used singly or in combination.

REFERENCES:
patent: 4145700 (1979-03-01), Jambotkar
patent: 4199774 (1980-04-01), Plummer
patent: 4233617 (1980-11-01), Klaspen

Affiliated with

Also associated with

Rating

MOS Power transistor with improved high-voltage capability does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS Power transistor with improved high-voltage capability, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS Power transistor with improved high-voltage capability will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-189325