Multilevel resist plated transfer layer process for fine line li

Details Multilevel resist plated transfer layer process for fine line li Multilevel resist plated transfer layer process for fine line li

1989-02-24

1992-02-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437203, 437229, 437944, 148DIG100, 148DIG105, 148DIG143, H01L 21467

Patent

active

050913425

ABSTRACT:
A multilevel resist process for fine line e-beam lithography, or, alternatively, deep ultraviolet (DUV) optical lithography with a clear field mask involving the use of a plated transfer layer for image reversal. The process preferably uses a high brightness, quarter-micron diameter electron beam and a high speed negative resist to fabricate microwave MESFETs, MODFETs, and integrated circuits with gate lengths of 0.25 micron and below. This is achieved by producing a line of negative resist which can be developed to 0.25 micron or below. A plated transfer layer is then applied which provides image reversal, converting the line of resist into an opening suitable for conventional gate recess etching, gate metal deposition, and lift-off. A positive resist can be substituted for the negative e-beam resist and exposed with DUV through a clear field mask instead of an electron beam for the fabrication of MESFETs.

REFERENCES:
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patent: 4376664 (1983-03-01), Hataishi et al.
patent: 4532002 (1985-07-01), White
B. D. Cantos et al., "A Reliable Method for .25 Micron Gate MESFET Fabrication Using Optical Photolithography", J. Electrochem. Soc., vol. 135, No. 5, pp. 1311-1312, May 1988.
L. G. Studebaker, G. J. DeWitte, F. L. Bugely, D. H. Riehl, "Prototype to Production Using the Hewlett-Packard Quarter-Micron Electron Beam System", J. Vac. Sci. Technol., B 5 (1), 92, 1987.
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R. M. Nagarajan, S. D. Rask, M. R. King, T. K. Yard, "Sub-Half Micrometer Gate Lift-Off by Three Layer Resist Process Via Electron Beam Lithography for Gallium Arsenide Monolithic Microwave Integrated Circuits (MIMICs)", SPIE Electron-Beam, X-Ray and Ion Beam Lithographies VII, vol. 923, 194, 1988.
H. Liu, M. P. deGrandrpe, W. E. Feely, "Characterization of High-Resolution Novolok Based Negative Electron-Beam Resist with 4u C/sq. cm Sensitivity", J. Vac Sci. Technol., B 6(1), 379, 1988.
L. Blum, M. E. Perkins, "A Study of the Effect of Key Processing Variables on the Lithographic Performance of Microposit SAL-601-ER7 Resist", J. Vac. Sci. Technol. B, 1988.

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