Programming voltage generator circuit for programmable memory

Details Programming voltage generator circuit for programmable memory Programming voltage generator circuit for programmable memory

1991-05-23

1992-12-29

Fears, Terrell W.

Static information storage and retrieval

Powering

365 45, 365227, 307529, G11C 1700

Patent

active

051757060

ABSTRACT:
Electrically programmable memories often include an internal circuit for establishing a programming voltage Vpp higher than the supply voltage. This circuit is formed by a charge pump followed by a voltage regulator. Previously, an analog circuit was usually provided behind the regulator to convert the level of voltage Vpp, set up by the charge pump, into a signal with a slow-rising edge (to reduce the constraints on the programmed cells and increase their lifetime). Instead of such analog circuit, the present invention provides a digital control circuit to control the regulator to set up a regulation voltage that rises gradually from a low value up to the desired value Vpp. The digital control circuit comprises counter with k outputs which enables the gradual short-circuiting and unshort-circuiting of the various series-mounted transistors constituting the regulator, thus making the regulation voltage increase slowly.

REFERENCES:
patent: 4447747 (1984-05-01), La Potin
No Waiting-EEPROM at Work by Kendall Pope Computer Design vol. 22 No. 7 pp. 191-196 Jun. 1983.

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