Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device
Patent
1991-01-11
1992-12-29
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
257136, 257256, 257264, H01L 2980, H01L 2974, H01L 2702
Patent
active
051755980
ABSTRACT:
A semiconductor thyristor of the Static Induction type having a split-gate structure, e.g., driving gates and non-driving gates, for controlling cathode-anode current flow. The split-gate structure comprises a plurality of primary driving gates formed in recesses of the channel region which respond to an external control signal for providing primary current control, and a plurality of secondary non-driving gates which are influenced by electric fields in the channel region extant during thyristor operation for providing secondary current control. In operation, the driving and non-driving gates coact so that the non-driving gates, having an induced potential lower than the potential applied to the driving gates, absorb charge carriers injected in the channel during thyristor operation. The relative disposition of the non-driving gates and the anode, as well as the respective doping concentrations of the anode and channel regions, enable the non-driving gates to absorb a substantial portion of charge carriers injected from the anode into the channel during high-power operation. Fast turn-on and turn-off is achieved by exclusion of the non-driving gate capacitance in the driving gate circuit.
REFERENCES:
patent: 4284997 (1981-08-01), Nishizawa
patent: 4985738 (1991-01-01), Nishizawa et al.
T. Chiu, "Planar Junction-Gate Field Effect Transistor", IBM Tech. Discl. Bull., vol. 14 #1, Jun. 1976, p. 297.
J. Nishizawa et al., "Characteristics of New Thyristors", JJAP, vol. 16 (1977), Suppl 16-1, pp. 541-542.
Nishizawa Jun-ichi
Ohmi Tadahiro
Prenty Mark V.
Zaidan Hojin Handotai Kenkyu Shinkokai
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