Storage capacitors using high dielectric constant materials

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

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Details

3613211, 257528, 365149, H01G 438

Patent

active

054615364

ABSTRACT:
A storage capacitor having high dielectric constant materials and a method for forming same are described. The method solves the problems associated with fabrication of planar capacitors for DRAM chips constructed from inorganic oxides with perovskite structure. These materials are not readily etched by conventional ion etching techniques. These materials also react with silicon and silicon dioxide and the disclosed process avoids these interactions.

REFERENCES:
patent: 5119154 (1992-06-01), Gnadinger
patent: 5313089 (1994-05-01), Jones, Jr.

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