Photoelectric conversion system

Television – Camera – system and detail – Solid-state image sensor

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348307, 257443, 257 72, H04N 314

Patent

active

054614198

ABSTRACT:
A plurality of photosensors are formed on an insulation substrate in a matrix fashion. Each of the photosensors includes a photoelectric conversion semiconductor, first and second gate electrodes, a drain electrode and a source electrode. A signal line is connected to each drain electrode. After precharge signals are applied to the respective signal lines by driving a switching circuit, a sense voltage is applied to the first gate electrode, a selection voltage is applied to the second gate electrode, while a light beam is supplied to the photoelectric conversion semiconductor. As a result, the precharge voltages held on the signal lines are lowered by voltages corresponding to the intensity of the incident light beam. The voltage remaining on the signal lines is read out from the signal lines by driving the switching circuits, thereby generating a signal having a pulse width with a starting point corresponding to a predetermined high level of the remaining voltage and an end point corresponding to a predetermined low level thereof.

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Patent Abstracts of Japan, vol. 15, No. 254 (E-1083) Jun. 27, 1991 & JP-A-03 082 171 (Casio Computer Co., Ltd.) Apr. 8, 1991.
Optoelectronic Devices and Technologies deel, 6, No. 2, Dec. 2, 1991, Tokyo, Japan, Nakamura et al "Present Status and Future Prospects of CMD Image Sensor".

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