Process for polishing and analyzing a layer over a patterned sem

Fishing – trapping – and vermin destroying

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437228, H01L 21302, H01L 21463

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active

054610079

ABSTRACT:
A layer over a patterned semiconductor is polished and analyzed to determine a polishing endpoint. The analysis may be performed using reflected radiation beams or by a radiation scattering analyzer. The analysis may be performed on virtually any layer using a radiation source. The analysis may be performed with a liquid, such as an aqueous slurry, contacting the substrate. The polishing and analysis may be integrated such that both steps are performed on the same polisher.

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patent: 5305089 (1994-04-01), Hosoe
Abe, et al.; "Microroughness Measurements on Polished Silicon Wafers," Japanese Journal of Appl. Phys.; vol. 31, Pt. 1, No. 3; pp. 721-728 (1992).
Horio, et al.; "Comparison of some instruments for measuring mirrorlike surfaces;" Nanotechnology; vol. 2, No. 1; pp. 33-38 (1991).
Montgomery, et al.; "Three dimensional nanoprofiling of semiconductor surfaces;" SPIE; vol. 1332; pp. 515-524 (1990).

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