Method of making high coupling ratio flash EEPROM device

Details Method of making high coupling ratio flash EEPROM device Method of making high coupling ratio flash EEPROM device

1995-03-16

1995-10-24

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 46, H01L 218247

Patent

active

054609917

ABSTRACT:
A method of fabricating an erasable electrical programmable read only memory, (EEPROM), device has been developed. This device results in a high capacitive coupling ratio cell due to the ability of the described process to maintain the tunneling region at minimum dimensions. This in turn is accomplished by the novel sidewall image transfer, and removal processes described in this invention.

REFERENCES:
patent: 4209349 (1980-06-01), Ho et al.
patent: 4648937 (1987-03-01), Ogura et al.
patent: 5236853 (1993-08-01), Hsue
patent: 5371027 (1994-12-01), Walker et al.
Hisamune et al. in IEDM 93-19-22, "A High Capacitive-Coupling Ratio, (HiCR), Cell for 3v Only 64 Mbit and Future Flash Memories", 1993.

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