Method for forming isolated intra-polycrystalline silicon struct

Details Method for forming isolated intra-polycrystalline silicon struct Method for forming isolated intra-polycrystalline silicon struct

1993-07-30

1995-10-24

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 40, 437915, 437940, 437968, H01L 21266, H01L 2184

Patent

active

054609836

ABSTRACT:
Therefore, according to the present invention, the isolation between adjacent intra-polycrystalline silicon layer components of one or more polycrystalline silicon layers of an integrated circuit device may be enhanced by patterning and then implanting one or more such polycrystalline silicon layers with a high dose of oxygen or nitrogen, in the range of approximately 1.times.10.sup.17 /cm.sup.2 to 1.times.10.sup.19 /cm.sup.2. A post implant anneal is performed in either nitrogen or argon to form a layer of either silicon dioxide or silicon nitride having desirable planar characteristics. The anneal is performed at a temperature range of approximately 1000 to 1400 degrees Celsius.

REFERENCES:
patent: 4062707 (1977-12-01), Mochizuki et al.
patent: 4143178 (1978-03-01), Harada et al.
patent: 4663827 (1987-05-01), Nakahara
patent: 4676841 (1987-06-01), Celler
patent: 4702937 (1987-10-01), Yamoto et al.
patent: 4862244 (1989-08-01), Yamagishi
patent: 4929566 (1990-05-01), Beitman
patent: 5266523 (1993-11-01), Manning
patent: 5298782 (1994-03-01), Sundaresan
Patent Abstracts of Japan, E field, vol. 14, No. 338, Jul. 20, 1990, The Patent Office Japanese Government, p. 46 E 954; and JP-A-02-114 532, Mitsubishi.
Patent Abstracts of Japan, E field, vol. 17, No. 518, Sep. 17, 1993, The Patent Office Japanese Government, p. 27 E 1434; and JP-A-05 136 398, Toshiba.
Nuclear Instruments and Methods in Physics Research, B19/20 (1987) "Fabrication of Buried Layers of SiO2 and Si3N4 Using Ion Beam Synthesis", K. J. Reeson, pp. 269-278.
Materials Chemistry and Physics, 31 (1992), "Synthesis of Buried Insulating Layers in Silicon by Ion Implantation", A. M. Ibrahim & A. A. Berezin, pp. 285-300.
"Oxygen Distributions in Synthesized SiO2 Layers Formed by High Dose O+ Implantation Into Silicon", PLF Hemment, et al., pp. 203-208, 1984, vol. 34.

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