Method for manufacturing lateral bipolar transistors

Details Method for manufacturing lateral bipolar transistors Method for manufacturing lateral bipolar transistors

1994-06-14

1995-10-24

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 32, 437 62, 437 84, H01L 21265, H01L 21302, H01L 2176, H01L 2120

Patent

active

054609828

ABSTRACT:
Manufacturing method for lateral bipolar transistors, wherein a highly doped emitter zone and collector zone as well as a base terminal zone are manufactured in a region in the silicon layer of a SOI substrate having a basic doping. The zones are manufactured by implantation using a mask. A base zone is then produced by implantation of dopant using the mask. The base zone is produced between the emitter zone and the collector zone.

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