Coating processes – Measuring – testing – or indicating
Patent
1991-01-28
1992-12-29
Pianalto, Bernard
Coating processes
Measuring, testing, or indicating
427124, 4271261, 427237, 427238, 427253, 427255, 4272552, 4272557, 427290, 427294, 427404, 4274197, 427576, 427578, B05D 306
Patent
active
051750171
ABSTRACT:
In forming a metal or metal silicide film by CVD, a fluorosilane is used as a reaction gas, or a fluoro-silane is added to a source gas. Examples of the metal halide used in the present invention include fluorides and chlorides of tungsten, molybdenum, titanium, tantalum and niobium. Among them, fluorides of tungsten and molybdenum are more desirable particularly from the viewpoint of the availability of the deposited metal or metal silicide. It is preferred that the source gases, i.e. silane series gas and metal halide, be diluted with a carrier gas such as nitrogen, hydrogen, helium or argon, and this is also true of the fluoro-silane. The total pressure is preferably 0.01 to 10 Torr. The reaction temperature is desirably 200.degree. to 800.degree. C., more desirably 300.degree. to 500.degree. C. Plasma CVD instead of thermal CVD may be employed for the purpose of lowering the reaction temperature.
REFERENCES:
patent: 3697343 (1972-10-01), Cuomo et al.
1988 Materials Research Society, pp. 55-61 "Characterisation of Process Parameters for Blanket Tungsten Contact Fill", Schmitz.
Harada et al, Preheating Effect on Selectivity in Tungsten CVD, 1992 Conf. Pro. ILSI-VII, 1922 Materials Research Society.
Joshi et al, "The Roll of Process Parameters of Selective . . . ", 1989 Materials Research Society, pp. 85-92.
Goto Hidekazu
Hom-ma Yoshio
Kobayashi Nobuyoshi
Suzuki Masayuki
Yokoyama Natsuki
Hitachi , Ltd.
Pianalto Bernard
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