Method of making aluminum gate self-aligned FET by selective bea

Details Method of making aluminum gate self-aligned FET by selective bea Method of making aluminum gate self-aligned FET by selective bea

1982-08-04

1984-09-04

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576T, 29571, 148 15, 357 91, 427 531, H01L 21265, H01L 21263

Patent

active

044688555

ABSTRACT:
A method for producing a semiconductor device comprising the steps of forming a gate insulating layer (3) on a semiconductor substrate having a first conductivity (1) and forming an aluminum gate electrode (4) on the gate insulating layer (3); impurity doped regions (5, 6) are then formed in the semiconductor substrate (1) by means of implantation of impurity ions having a second conductivity opposite that of the first conductivity into the semiconductor substrate (1) using the aluminum gate electrode (4) as a masking material for annealing the impurity doped regions (5, 6). The annealing process occurs by irradiating a beam on the impurity doped regions (5, 6) including the aluminum gate electrode (4). After forming the impurity doped regions (5, 6) in the semiconductor substrate (1), at least the upper surface of the aluminum gate electrode (4) is covered with an insulating layer (7).

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patent: 4379727 (1983-04-01), Hansen et al.
patent: 4381201 (1983-04-01), Sakurai
Fowler et al., IBM-TDB, 22, (1980), 5473.
Koyanagi et al., Appl. Phys. Letts. 35, (1979), 621.
Tamura et al., J. Appl. Phys. 50, (1979), 3783.
Iwamatsu et al., J. Electrochemical Soc. 128, (Feb. 1981), 384.

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