Facsimile and static presentation processing – Facsimile – Recording apparatus
Patent
1985-11-12
1988-05-17
Ng, Jin F.
Facsimile and static presentation processing
Facsimile
Recording apparatus
35821322, H04N 314
Patent
active
047454814
DESCRIPTION:
BRIEF SUMMARY
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a solidstate imaging device and, in particular, to a CCD imaging device.
2. Background Art
On the CCD area sensor, many types are well known. The CCD area sensor of which a vertical CCD combines a picture cell column, is called the frame transfer CCD area sensor, (the frame transfer sensor for short). The frame transfer sensor having a buffer CCD between the vertical CCDs and a horizontal CCD is called the buffer frame transfer sensor. And, the buffer CCD accumulates signal charge packets of one TV field. The frame transfer sensor without said buffer CCD is called the full frame frame transfer sensor. The CCD area sensor having separately the vertical CCD and the picture cell column is called the interline CCD sensor, (the interline transfer sensor for short). The interline transfer sensor of which the transfer electrode between the picture cell and the vertical CCD is connected to the transfer electrode of the vertical CCD is called the common electrode interline transfer sensor. Said transfer electrode between the picture cell and the vertical CCD is named the address transfer electrode for short. The transfer electrode of the vertical CCD is named the vertical transfer electrode. Generally, a CCD is driven by 1 or 2 or 3 or more-phase voltage. In order to reduce the smear noise being the important problem of the CCD area sensor, Japanese Patent Application No. 56-35067 discloses subtracting one row of the smear noises memorized previously, from one row of the signals generated later.
Japanese patent application Nos. 58/41211, 62547, 76477, 86416, 91967, 207881, 232134, 240644, 249754, 59/15950, 34839, 49684, 69835, 91947, 95314, 101456, 189970 211797 are prior applications op the present invention.
Japanese patent application No. 59-66277 describing the two-electrode/bit sensor of the clocked line type is the prior application relating to the present invention.
SUMMARY OF THE INVENTION
In spite of said prior arts, the imager competing against imaging tubes and optical cameras requires more improvements. The improvement of S/N ratio and, in particular, the improvement of the signal per smear noise ratio is important. The first object of the invention is to improve the S/N ratio of the imagers. The second object of the invention is to improve resolution of imagers.
The 1st embodiment
On the CCD area sensor, the feature of the invention is to apply the dissimilar clock voltages to the clocked vertical transfer electrodes, to inject again the next empty potential well from the output terminal of the vertical CCD before the previous empty potential well injected from said output terminal reaches the opposite end and, to separately transfer all the charge packets in potential wells of the vertical CCD. Said transfer is briefly called the continuous injection electrode/bit transfer. Each charge packet in the vertical CCD is being accumulated in each potential well under the directional transfer electrode or, under the odd (or even) non-directional transfer electrode. Of course, the potential barier is created under the even (or odd) non-directional transfer electrode. The non-directional transfer electrode is the transfer electrode which can create a flat channel potential under itself. And the non-directional transfer electrode can transfer charge packets to either of the directions. The directional transfer electrode is the transfer electrode which can create the potential barier having a shallow potential VL and, the potential well having a deep potential VH, in the channel area. Typically, four-phase CCDs have four kinds of the non-directional transfer electrodes. And the two-phase CCD has two kinds of the directional transfer electrodes. For example, in the CCD with the channel of the N type, the shallow potential is the greater potential toward the negative potential, and the deep potential is the greater potential toward the positive potential. Accordingly, the vertical CCD of the present invention can have hal
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Brinich Stephen
Ng Jin F.
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