Semiconductor device capable of easily forming cavity and its ma

Details Semiconductor device capable of easily forming cavity and its ma Semiconductor device capable of easily forming cavity and its ma

1996-08-13

1998-07-14

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257 97, 257103, 257627, H01L 3300, H01L 2904, H01L 31036

Patent

active

057808732

ABSTRACT:
A semiconductor light-emitting device comprises a semiconductor light-emitting device section of a hexagonal type; and an electrically conductive semiconductor substrate of a cubic type combined into the semiconductor light-emitting device, and having an orientation of its cleavage facet conformed to an orientation of the cleavage facet of one of semiconductor layers forming the semiconductor light-emitting device section. The substrate of the cubic type is cleaved so that the semiconductor light-emitting device section of the hexagonal type is induced to be cleaved, and that a mirror surface can be easily formed.

REFERENCES:
patent: 4734576 (1988-03-01), Agoston et al.
patent: 4955699 (1990-09-01), Singh et al.
patent: 5602418 (1997-02-01), Imai et al.
patent: 5625202 (1997-04-01), Chai
R.K. Sink, et al., "Cleaved GaN Facets By Wafer Fusion of GaN To InP ", Applied Physics Letter, 68 (15), Apr 8, 1996, pp 2147-2149.

Affiliated with

Also associated with

Rating

Semiconductor device capable of easily forming cavity and its ma does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device capable of easily forming cavity and its ma, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device capable of easily forming cavity and its ma will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1884531