Control circuitry for high voltage solid-state switches

Details Control circuitry for high voltage solid-state switches Control circuitry for high voltage solid-state switches

1980-05-15

1982-08-17

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307252C, 307305, 307318, 307566, 357 38, H03K 1760

Patent

active

043451632

ABSTRACT:
To switch a first gated diode switch (GDS1) to the "OFF" state requires a voltage applied to the gate which is more positive than that of the anode or cathode and a sourcing of current into the gate of substantially the same order of magnitude as flows between the anode and cathode of the first switch. Control circuitry, which uses a second gated diode switch (GDSC) coupled by the cathode to the gate of the first switch (GDS1), is used to control the state of the first switch (GDS1). The control circuitry comprises a first branch circuit coupled to the gate of GDSC and to a first potential source +V1, a second branch circuit coupled to the anode of GDSC and to a second potential source +V2, and a third branch circuit coupled to the anode of GDSC and to a third potential source +V3. The first branch circuit is connected to the gate of the second switch (GDSC) and controls the state thereof. The second branch circuit maintains the state of the load switch (GDS1) and is adapted to supply up to a preselected maximum amount of current into the anode of GDSC and then to automatically reduce the amount of supplied current substantially. The third branch circuit is used to provide a surge of current during a current break operation to turn GDS1 to an OFF state.

REFERENCES:
patent: 4250409 (1981-02-01), Davis et al.

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