Semiconductor device for use in memory cells

Details Semiconductor device for use in memory cells Semiconductor device for use in memory cells

1981-10-28

1984-07-31

James, Andrew J.

357 49, 357 48, 357 51, H01L 2704

Patent

active

044633700

ABSTRACT:
An integrated circuit element which is laterally insulated by oxide includes a transistor and a resistor. The resistor is formed by an elongation of the base and includes an emitter of the transistor. A pinching zone is present beneath the emitter and is selectively doped with respect to a pinching zone located beneath a further emitter of the transistor. The integrated circuit element may be combined with another substantially identical element to form a compact memory cell.

REFERENCES:
patent: 4005453 (1977-01-01), Le Can et al.
patent: 4032902 (1977-06-01), Herndon
patent: 4246592 (1981-01-01), Bartleh
patent: 4246593 (1981-01-01), Bartleh
patent: 4255674 (1981-03-01), Grenier et al.
patent: 4258380 (1981-03-01), Roger
patent: 4292730 (1981-10-01), Ports

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