1984-12-13
1985-11-12
Edlow, Martin H.
357 71, 357 54, H01L 2348
Patent
active
045531544
ABSTRACT:
An electrode adapted for a semiconductor device, comprises an alloy layer formed with a gold basis, the alloy layer being disposed on the semiconductor device to provide an ohmic contact with the semiconductor device, a TiN layer, a Ti layer, and an Al layer which is bonded to an external terminal for the semiconductor device.
REFERENCES:
patent: 3761309 (1973-09-01), Schmitter et al.
patent: 3879746 (1975-04-01), Fournier
patent: 3923559 (1975-12-01), Sinha
patent: 4316201 (1982-02-01), Christon
patent: 4414561 (1983-11-01), Keramidas
patent: 4417387 (1983-11-01), Heslop
Edlow Martin H.
Sharp Kabushiki Kaisha
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