Terraced substrate semiconductor laser

Details Terraced substrate semiconductor laser Terraced substrate semiconductor laser

1980-09-10

1982-11-23

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, H01S 319

Patent

active

043609201

ABSTRACT:
In a semiconductor laser a semiconductor substrate has a terrace structure in a manner to have an upper face, a lower face, and a step part disposed between the upper and lower faces. A clad layer is formed on the semiconductor substrate having an upper part, a lower part, and a central part. The upper part is on the upper face and the step part. The lower part is on the lower face and the central part connecting the upper and lower parts and is thicker than the upper and lower parts in a manner that a step-shaped downward-bending surface of the central part is located above the lower face. An active layer formed on the clad layer includes an upper lateral part, a lower lateral part, a center part connecting the upper and lower lateral parts, with a lasing region being a part of the upper lateral part which is near a bending part of the step-shaped downward-bending surface.

REFERENCES:
patent: 4296387 (1981-10-01), Sugino et al.

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