Method of making fully self-aligned bipolar transistor involving

Details Method of making fully self-aligned bipolar transistor involving Method of making fully self-aligned bipolar transistor involving

1987-01-13

1988-05-17

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437203, 437 33, 437193, 437233, 437162, H01L 2144

Patent

active

047450878

ABSTRACT:
An improved method of making a bipolar transistor is disclosed which comprises forming one or more mask layers over a silicon substrate, etching at least one of said one or more masking layers to define a base contact area and a spaced apart collector contact area with an unetched emitter contact area defined in-between, forming a collector slot in a substrate of an integrated circuit structure through the collector contact area defined in the one or more mask layers, oxidizing the sidewall of the collector slot, filling the collector slot and the base and collector contact regions with polysilicon, removing one or more of the mask layers between the polysilicon base and collector contacts, oxidizing the exposed sidewalls of the polysilicon base and collector contacts, forming an emitter contact region between said collector and base contact regions insulated from the base and collector contacts by the sidewall oxidation thereon, and forming a base region in said substrate spaced from the collector slot by the oxide formed on the sidewall of the collector slot.

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