Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1996-06-20

1998-02-24

Healy, Brian

Coherent light generators

Particular active media

Semiconductor

372 21, 372 45, H01S 319, H01S 310

Patent

active

057217521

ABSTRACT:
A semiconductor laser device includes an active layer from which laser light is emitted, a front facet reflection film, a back facet reflection film, and a resonator including the front and back facet reflection films, at least one of the front and back facet reflection films includes a saturable absorber to the laser light and, a thickness d of the facet reflection film comprising a saturable absorber is represented by ##EQU1## where n is a refractive index of the facet reflection film comprising a saturable absorber to a wavelength .lambda. of the laser light. Therefore, independently of a differences in optical confinement coefficient and in differential gain between a region where a current flows and a region where no current flows in the active layer, self-pulsation in which the emitted light is pulsed light having high frequency occurs easily, whereby a self-pulsation semiconductor laser device having good laser characteristics, such as a transverse mode characteristic and a threshold current characteristic, is obtained. Consequently, a wider margin of device design is afforded than in the prior art device, whereby the device is stably fabricated with a good yield.

REFERENCES:
patent: 4337443 (1982-06-01), Umeda et al.
patent: 4732783 (1988-03-01), Choe et al.
patent: 4751708 (1988-06-01), Jackson et al.
patent: 5130830 (1992-07-01), Fukushima
patent: 5224113 (1993-06-01), Tsang
Waynant et al, Electro-Optics Handbook, New York: McGraw-Hill, Inc., (no month available) 1994, pp.11.48-11.49.
Extended Abstract 28p-K-5, Japan Society of Applied Physics, 1994.
Sections 16.0, 16.1, 16.2, and 16.3 from Optical Electronics, Third Edition, pp. 499-503 (no month available) 1985: New York: CBS College Publishing, 1985.

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