Redundant circuit of semiconductor device and method of producin

Details Redundant circuit of semiconductor device and method of producin Redundant circuit of semiconductor device and method of producin

1986-10-08

1988-05-31

Edlow, Martin H.

357 59, H01L 2702

Patent

active

047484918

ABSTRACT:
A redundant circuit of a semiconductor device comprises a fuse (73) for laser trimming to connect between aluminum interconnections (6). The fuse (73) has a two-layer structure comprising a first film (3a) of polysilicon and a second film (7a) formed on the film (3a) of metal silicide, the line width l.sub.0 of the first film (3a) being shorter than the line width l.sub.1 of the second layer (7a). In addition, a PSG film (4) is formed to cover the fuse (73), and the laser beam is irradiated on the PSG film (4) in disconnecting the fuse (73). Accordingly, the first film (3a) having a short line width is uniformly fused and expanded, the fuse (73) is uniformly disconnected, and an opening (10) formed after explosion and splash thereof becomes smaller.

REFERENCES:
patent: 4135295 (1979-01-01), Price
patent: 4518981 (1985-05-01), Schlupp
patent: 4602420 (1986-07-01), Saito
patent: 4617723 (1986-10-01), Mukai
patent: 4628590 (1986-12-01), Udo et al.
"Laser Programmable Redundancy and Yield Improvement in a 64K DRAM", Robert T. Smith et al, IEEE Journal of Solid-State Circuits, vol. SC-16, No. 5, Oct. 1981, pp. 506-513.

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