Integrated circuit semiconductor device having improved isolatio

Details Integrated circuit semiconductor device having improved isolatio Integrated circuit semiconductor device having improved isolatio

1986-03-24

1988-05-31

Wojciechowicz, Edward J.

357 238, 357 2311, 357 49, 357 41, H01L 2704

Patent

active

047484896

ABSTRACT:
An integrated circuit semiconductor device having first and second circuit elements isolated by an improved isolation region is disclosed. The isolation region includes first and second thick insulating layers at least partly embedded in a semiconductor substrate of one conductivity and an impurity portion of one conductivity having a higher impurity concentration than that of the substrate, provided between the first and second thick insulating layers such that it is separated from both of the first and second circuit elements.

REFERENCES:
patent: 3751722 (1973-08-01), Richman
patent: 4523369 (1985-07-01), Nagakubo
patent: 4546536 (1985-10-01), Anantha et al.

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