Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1987-05-26

1988-05-31

Clawson, Jr., Joseph E.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 231, 357 45, 357 51, 357 59, 365190, 365202, H01L 2702

Patent

active

047484870

ABSTRACT:
A semiconductor memory device wherein the equivalent series resistances that are interposed in series in the pairs of complementary data lines D, D, are substantially the same as one another among the individual complementary data lines D, D. The equivalent series resistance is comprised of pull-up MISFET's and column switching MISFET's that exist between the power source V.sub.CC and the sense circuit. Parity is maintained for the pull-up MISFET's (Q.sub.p, Q.sub.p) and the column switching MISFET's (Q.sub.y, Q.sub.y) that exist on the pairs of complementary data lines D, D. To maintain this parity, the two MISFET's are formed to have the same shape. In addition, the arrangement of contacts to the transistors are set so that the directions in which the currents flow and lengths of current paths are also the same. In other words, contact portions between aluminum electrode and source and drain regions are formed at the same positions in the two MISFET's.

REFERENCES:
patent: 4627031 (1986-12-01), Van Tran

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