1985-08-27
1988-05-31
Edlow, Martin H.
357 24, H01L 2714
Patent
active
047484861
ABSTRACT:
A solid-state image sensor having a plurality of unit cells, each of which comprises a substrate; an electroconductive layer formed on the substrate and having a different polarity from the polarity of the substrate; a photoelectric conversion area for the generation of a signal charge when illumination of the photoelectric conversion area is attained; and a CCD register area for the transfer of the signal charge generated in the photoelectric conversion area, the photoelectric conversion area and the CCD register area being formed with a space therebetween within said electroconductive layer at substantially the same distance from the substrate, resulting in a complete depletion of each of the regions of the electroconductive layer, in which the photoelectric conversion area and the CCD register area are positioned, respectively, by the application of a reverse bias voltage between the electroconductive layer and the substrate to thereby attain the transfer of the excess charge generated in the photoelectric conversion area not only from the photoelectric conversion area into the substrate but also from the CCD register area into the substrate through the corresponding depleted regions of the electroconductive area.
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patent: 4672455 (1987-06-01), Miyatake
IEEE International Solid State Circuits Conference, vol. 25, 11th Feb., 1982, pp. 168-169, 134, New York, US, "Interline CCD Image Sensor with an Anti-Blooming Structure", Y. Ishihara et al.
European Search Report, No. EP 85 30 5934, Berlin, 7/28/86, Pretzel.
IEEE Transactions on Electron Devices, vol. ED-29, No. 12, Dec. 1982, pp. 1857-1862, "Blooming Characteristics of a Solid-State Imager Overlaid with a Photoconductor", T. Chikamura et al.
Patent Abstracts of Japan, vol. 9, No. 219, (M-410), (1942), Sep. 6, 1985.
Edlow Martin H.
Sharp Kabushiki Kaisha
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