Power MOSFET gate driver circuit

Details Power MOSFET gate driver circuit Power MOSFET gate driver circuit

1986-08-26

1988-05-31

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307572, 307300, 307270, H03K 17687, H03K 333

Patent

active

047483512

ABSTRACT:
A MOSFET gate driver circuit reduces the noise susceptibility of a MOSFET switch by utilizing dual drive paths to apply turn-on and turn-off bias signals to the gate of the MOSFET. Drive pulses are coupled to the MOSFET switch via a pulse transformer which has two serially connected secondary windings. Turn-on pulses are coupled by a diode from the first secondary to the MOSFET gate. Turn-off pulses are coupled via the second secondary to a control MOSFET which is turned on by a turn-off pulse and remains on in order to keep the gate of the MOSFET switch to a hold off voltage.

REFERENCES:
patent: 3805054 (1974-04-01), Orlando
patent: 4438356 (1984-03-01), Fleischer
patent: 4453089 (1984-06-01), Shuey et al.
patent: 4461966 (1984-07-01), Hebenstreit
patent: 4511815 (1985-04-01), Wood
patent: 4575642 (1986-03-01), Hochreutiner

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