Semiconductor laser with lattice mismatch

Details Semiconductor laser with lattice mismatch Semiconductor laser with lattice mismatch

1998-02-26

1999-05-04

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 96, 257190, 117 93, H01S 319

Patent

active

059011653

ABSTRACT:
A semiconductor laser having: a group III-V semiconductor substrate; a group III-V semiconductor clad layer disposed on the substrate with a lattice mismatch of 0.5% or more; group III-V semiconductor light propagation layers disposed on the clad layer, including an active layer and light confining layers on both sides of the active layer, the light confining layers containing Al as the group III element; a group III-V semiconductor buffer layer disposed between the substrate and the clad layer, the buffer layer including a composition graded layer gradually changing the lattice constant, and having a cross hatched step on the surface thereof; and an intermediate layer of group III-V semiconductor disposed between the buffer layer and the clad layer, the intermediate layer containing phosphorous as the group V element. A semiconductor laser of 1 .mu.m band is provided whose substrate and clad layer are lattice mismatched and whose clad layer uses group III-V semiconductor having a wide forbidden band and containing Al as the group III element.

REFERENCES:
patent: 4712219 (1987-12-01), Yano et al.
patent: 4720836 (1988-01-01), Fukuzawa et al.
patent: 5408487 (1995-04-01), Uchida et al.
patent: 5456206 (1995-10-01), Lee et al.
patent: 5495115 (1996-02-01), Kudo et al.
patent: 5633516 (1997-05-01), Mishima et al.

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