Method of manufacturing a semiconductor device with a planarized

Details Method of manufacturing a semiconductor device with a planarized Method of manufacturing a semiconductor device with a planarized

1995-10-03

1998-02-24

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437228, 437238, H01L 21316

Patent

active

057211566

ABSTRACT:
A method of manufacturing a semiconductor device having a flat surface and an interlayer insulating film having superior crack resistance is disclosed. A first silicon oxide film having a superior crack resistance is formed on a semiconductor substrate so as to cover the surface of a stepped pattern. A second silicon oxide film having a superior step coverage is deposited on the above-mentioned first silicon oxide film so as to fill the recessed portions of the stepped pattern and to cover the stepped pattern. The above-described second silicon oxide film is etched to a prescribed thickness. A third silicon oxide film superior in filling of recesses is placed into the recessed portions existing on the surface of the above-described second silicon oxide film after its etching. A fourth silicon oxide film is formed on the semiconductor substrate including the above-described second silicon oxide film and third silicon oxide film.

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