High electron mobility transistor having thin, low resistance sc

Details High electron mobility transistor having thin, low resistance sc High electron mobility transistor having thin, low resistance sc

1997-04-15

1999-05-04

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

H01L 29778

Patent

active

059006536

ABSTRACT:
A high electron mobility transistor has a double-heterojunction structure including a channel layer for developing therein an electron gas layer having a substantially uniform electron gas density, and upper and lower high-resistance wide-band gap layers disposed respectively over and beneath the channel layer. Each of the upper and lower high-resistance wide-band gap layers has a silicon-doped planar layer disposed therein. The upper high-resistance wide-band gap layer including a low-resistance wide-band gap layer disposed in an upper end region thereof remotely from the channel layer.

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A. Kusters, et al., "Double-Heterojunction Lattice-Matched and Pseudomorphic InGaAs HEMT with delta-Doped InP Supply Layers and p-InP Barrier Enhancement Layer Grown by LP-MOVPE," IEEE Electron Device Letters, vol. 14, No. 1, 1993, pp. 36-39.
C.S. Wu, et al., "High Efficiency Microwave Power AlGaAs/InGaAs PHEMT's Fabricated by Dry Etch Single Gate Recess," IEEE Transactions on Electon Devices, vol. 42, No. 8, 1995, pp. 1419-1424.
P. C. Chao, et al., "W-Band Low-Noise InAlAs/InGaAs Lattice-Matched HEMT's," IEEE Electron Device Letters, vol. 11, No. 1, 1990, pp. 59-62.
T. Ishikawa, et al., "Improvement of Two-Dimensional Electron Gas Concentration in Selectively Doped GaAs/N-AlGaAs Heterostructure by Atomic Planar Doping," Journal of Applied Physics, vol. 61, No. 5, 1987, pp. 1937-1940.

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