Semiconductor device with SiC and GaAlInN

Details Semiconductor device with SiC and GaAlInN Semiconductor device with SiC and GaAlInN

1997-02-04

1999-05-04

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

257 77, 257183, 257200, 257103, 257 96, 257 97, 372 44, 372 45, 372 46, H01L 310312, H01L 3300

Patent

active

059006471

ABSTRACT:
A semiconductor device of the present invention includes: an SiC substrate; an SiC growth layer for absorbing a grating defect of the SiC substrate and/or a damage at and in the vicinity of a surface of the SiC substrate; and Ga.sub.x Al.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) layer formed on the SiC growth layer.

REFERENCES:
patent: 5273933 (1993-12-01), Hatano et al.
patent: 5523589 (1996-06-01), Edmond et al.
patent: 5679965 (1997-10-01), Schetzina
patent: 5686737 (1997-11-01), Allen

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