Method of preventing deterioration of film quality of transparen

Details Method of preventing deterioration of film quality of transparen Method of preventing deterioration of film quality of transparen

1996-10-11

1999-05-04

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 59, H01L 2908

Patent

active

059006463

ABSTRACT:
A semiconductor device including an insulating layer, a patterned conductive layer on the insulating layer, a semiconductor layer on the patterned conductive layer, and a reactive layer formed by reacting the patterned conductive layer with growth nuclei on the patterned conductive layer between the patterned conductive layer and the semiconductor layer, the growth nuclei containing any of elements in group IIIb, group IVb, group Va and group VIIb that does not constitute the conductive film and the insulating film on the surface of the conductive film.

REFERENCES:
patent: 4733284 (1988-03-01), Aoki
patent: 4849797 (1989-07-01), Ukai et al.
patent: 4864376 (1989-09-01), Aoki et al.
patent: 4948231 (1990-08-01), Aoki et al.
patent: 5242530 (1993-09-01), Batey et al.

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