Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1981-03-25
1982-08-17
Kendall, Ralph S.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427 85, 427 88, 427 89, H01L 2122, H01L 21265
Patent
active
043449808
ABSTRACT:
A method for fabricating superior ohmic contacts in a III-V semiconductor wafer by virtue of double donor (or double acceptor) impurity complex formation. A typical III-V, e.g., GaAs, semiconductor device is fabricated by depositing a thin Si.sub.3 N.sub.4 layer and then regions are opened, by photoresist methods, upon which ohmic contacts are to be made. New resist is applied over the wafer and the ohmic contact regions are again opened. Si ions are now implanted to form the active channel and the drain and source regions (in an FET device). The resist layer is removed, a layer of Ge is laid down and a layer of Se over the Ge. The Ge layer is coated with a layer of SiO.sub.2, Si.sub.3 N.sub.4 or a mixture of both, and annealed, causing the Ge and Se to diffuse rapidly into the Si ion implant region. The SiO.sub.2, Si.sub.3 N.sub.4 and excess surface Ge and Se is now removed. Metallization of the electrode areas, preferably with reliable refractory metals, is effected, producing ohmic tunneling contacts over the Ge/Se diffused regions and rectifying, non-ohmic, Schottky barrier contacts over the selected remainder of the Si-implanted region.
REFERENCES:
patent: 4188710 (1980-02-01), Davey et al.
patent: 4267014 (1981-05-01), Davey et al.
Anderson et al., J. Appl. Phys. 49 (5) May 1978, pp. 2998-3000.
Shahriery et al., Diffused Ge Ohmic Contact for N-Type GaAs, (Abstract for alk present at GaAs IC Symposium, TRW Inc., Redendo Beach, Calif. 11/6/80.
Yoder, Complexes and Their Effects on III-V Compounds (Paper presented at Semi-Insulating III-V Materials Conf. at U. of Nottingham, Eng. Apr. 14-16, 1980.
Beers R. F.
Kendall Ralph S.
Marsh L. A.
The United States of America as represented by the Secretary of
LandOfFree
Superior ohmic contacts to III-V semiconductor by virtue of doub does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Superior ohmic contacts to III-V semiconductor by virtue of doub, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Superior ohmic contacts to III-V semiconductor by virtue of doub will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-187092