Epitaxial wafer for light-emitting diode

Details Epitaxial wafer for light-emitting diode Epitaxial wafer for light-emitting diode

1995-04-27

1996-07-09

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257101, 257102, H01L 3300

Patent

active

055347177

ABSTRACT:
An epitaxial wafer for a light-emitting diode comprises an n-GaAs single crystal substrate on which a Si-doped n-Ga.sub.1-x Al.sub.x As epitaxial layer, a Si-doped p-Ga.sub.1-y Al.sub.y As active layer, and a p-Ga.sub.1-z Al.sub.z As window layer are epitaxially formed, and in which the window/layer has a Si concentration of below 1.times.10.sup.18 cm.sup.-3.

REFERENCES:
patent: 4575742 (1986-03-01), Kohashi et al.
patent: 5181084 (1993-01-01), Bommer et al.
L. Ralph Dawson, "High-efficiency graded-band-gap Ga.sub.1-x A1.sub.x As light-emitting diodes", Journal of Applied Physics, vol. 48, No. 6, Jun. 1977, pp. 2485-2492.
Edward S. Yang, "Fundamentals of Semiconductor Devices," 1978, pp. 168-169, McGraw-Hill.

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