Photoelectric converter with doped capacitor region

Details Photoelectric converter with doped capacitor region Photoelectric converter with doped capacitor region

1991-09-04

1992-06-30

Jackson, Jr., Jerome

357 51, 357 34, H01L 2972, H01L 2714

Patent

active

051268140

ABSTRACT:
A photoelectric converter made of a semiconductor transistor of the type that the potential of a control electrode region is controlled through a capacitor, wherein the capacitor is constructed such that the capacitor electrode faces the control electrode region with an insulating layer interposed therebetween, and at least the portion of the control electrode region which faces said capacitor electrode is a region having a high impurity density.

REFERENCES:
patent: 3519897 (1970-07-01), Ferrell
patent: 3577038 (1971-05-01), Cook
patent: 3624428 (1971-11-01), Weimer
patent: 3992232 (1976-11-01), Kaji et al.
patent: 4001869 (1977-01-01), Brown
patent: 4413401 (1983-11-01), Klein et al.
patent: 4686554 (1987-08-01), Ohmi et al.

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