Semiconductor non-volatile memory

Details Semiconductor non-volatile memory Semiconductor non-volatile memory

1988-11-29

1992-06-30

Jackson, Jr., Jerome

357 6, H01L 2978

Patent

active

051268094

ABSTRACT:
A semiconductor non-volatile memory for use in a computer or the like has an erasing electrode and a writing electrode provided adjacent to a floating gate electrode through respective tunnel oxide films. Rewriting of the memory is effected by applying a strong electric field to each of the tunnel oxide films through the erasing and writing electrodes only in the forward direction so that it is difficult for the tunnel oxide film to break down worn due to the application of the electric field.

REFERENCES:
patent: 4099196 (1978-07-01), Simko
patent: 4503519 (1985-03-01), Arakawa

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