Patent
1989-11-29
1992-06-30
James, Andrew J.
357 35, 357 43, H01L 2910
Patent
active
051268060
ABSTRACT:
A lateral insulated gate bipolar transistor comprises a p layer and a p.sup.+ layer provided apart from each other and extending from a surface of an n.sup.- layer into the n.sup.- layer, an n.sup.+ layer provided extending from a surface of the p layer into the p layer, a first main electrode provided in ohmic contact with the n.sup.+ layer and the p layer, a second main electrode provided in ohmic contact with the p.sup.+ layer, and a control electrode provided through an insulating film on the n.sup.+ layer, the p layer and the n.sup.- layer on the side of the first main electrode away from the second main electrode.
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Mori Mutsuhiro
Sakurai Naoki
Tanaka Tomoyuki
Bowers Courtney A.
Hitachi , Ltd.
James Andrew J.
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