Junction field effect transistor with SiGe contact regions

Details Junction field effect transistor with SiGe contact regions Junction field effect transistor with SiGe contact regions

1990-10-05

1992-06-30

Jackson, Jr., Jerome

357 231, 357 16, 357 61, 357 67, H01L 2980, H01L 29163

Patent

active

051268051

ABSTRACT:
A junction field effect transistor, specifically a static induction transistor. Prior to metallization a thin layer of germanium is placed over the exposed silicon of the source and gate regions. The germanium is intermixed with the underlying silicon to form a germanium-silicon composite. A rapid thermal anneal is performed to recrystallize the germanium-silicon composite. Alternatively, a single crystal epitaxial layer may be deposited on the silicon. Conventional metallization procedures are employed to produce ohmic source and gate contact members to the germanium-silicon composite or the epitaxial germanium of the source and gate regions. By virtue of the reduced bandgap provided by the presence of the germanium, the contact resistance of the device is reduced.

REFERENCES:
patent: 4521794 (1985-06-01), Murase et al.
patent: 4551909 (1985-11-01), Cogan et al.
patent: 4596605 (1986-06-01), Nishizowa et al.
patent: 4611384 (1986-09-01), Bencuya et al.
patent: 4617066 (1986-10-01), Vosudev
patent: 4835112 (1989-05-01), Pfiester et al.
patent: 4837173 (1989-06-01), Alvis et al.
patent: 4849371 (1989-07-01), Hansen et al.
Growth, nucleation & electrical properties of molecular beam epitaxially grown AS-doped GE on Si Substrates, P. Sheldon et al, J Vac. Sci. Tech. A, vol. 4, No. 3, May/Jun. 1986.
Tamama, T., Voltage-Controlled Negative Resistance In a Submicron Vertical JFET, Solid State Elec., Oct. 1984, pp. 855-866.

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