Method of manufacturing oxide single crystal

Details Method of manufacturing oxide single crystal Method of manufacturing oxide single crystal

1997-09-26

1999-05-04

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 13, 117936, C30B 1502

Patent

active

059000546

ABSTRACT:
Provided is an oxide single crystal of large size having the crystal structure of Ca.sub.3 Ga.sub.2 Ge.sub.4 O.sub.14 and containing Ge as a constituent element and a method of manufacturing thereof. The oxide single crystal is obtained by a manufacturing method comprising the steps of preparing a melt of starting materials containing GeO.sub.2 and growing said oxide crystal from said melt of starting materials in single-crystal growing atmosphere, which is characterized in that said starting materials contain GeO.sub.2 in a stoichiometrically excess amount, and/or said single-crystal growing atmosphere is a gas having an oxygen partial pressure greater than about 2.times.10.sup.-1 atm.

REFERENCES:
patent: 3650702 (1972-03-01), Swets
patent: 5100870 (1992-03-01), Chen et al.
patent: 5625202 (1997-04-01), Chai

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