Method of manufacturing titanium silicide containing semiconduct

Details Method of manufacturing titanium silicide containing semiconduct Method of manufacturing titanium silicide containing semiconduct

1993-12-02

1996-07-09

Fourson, George

Fishing, trapping, and vermin destroying

437200, 437 40, H01L 2144, H01L 2128

Patent

active

055344534

ABSTRACT:
A method of manufacturing a semiconductor device having a titanium silicide layer comprises the steps of forming a silicon layer and titanium layer on a polysilicon layer, washing a surface of the silicon layer, and heat treating the titanium layer after washing to make the titanium layer a titanium silicide.

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patent: 4814294 (1989-03-01), West et al.
patent: 4873204 (1989-10-01), Wong et al.
patent: 5124280 (1992-06-01), Wei et al.
patent: 5173450 (1992-12-01), Wei
S. W. Kang et al "Effects of amorphous silicon capping layer on arsenic redistribution during TiSi.sub.2 formation" Appl Phys Lett 54(8) 20 Feb. 1989 pp 693-695.
S. W. Kang, "The Effect of Amorphous Silicon Capping on Titanium During TiSi2 Formation by RTA", J. Materials Science, vol. 25, No. 1A, Jan. 1990, pp. 98-102.
Patent Abstracts of Japan, vol. 15, No. 390, Oct. 3, 1991 JPA A-03155 641.

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