Metal treatment – Barrier layer stock material – p-n type
Patent
1994-03-09
1996-07-09
Fourson, George
Metal treatment
Barrier layer stock material, p-n type
427588, 437959, C09K 1177
Patent
active
055340792
ABSTRACT:
A CVD process for producing a rare earth-doped, epitaxial semiconductor layer on a substrate is disclosed. The process utilizes a silane or germane and a rare earth compound in the gas phase. By this method single phase, rare earth-doped semiconductor layers, supersaturated in the rare earth, are produced. The preferred rare earth is erbium and the preferred precursors for depositing erbium by CVD are erbium hexafluoroacetylacetonate, acetylacetonate, tetramethylheptanedionate and flurooctanedionate. The process may be used to produce optoelectronic devices comprising a silicon substrate and an erbium-doped epitaxial silicon film.
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Booth Richard A.
Fourson George
International Business Machines - Corporation
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