Patent
1990-06-15
1992-01-28
James, Andrew J.
357 237, 357 54, 357 80, 357 59, 357 71, H01L 2348
Patent
active
050847520
ABSTRACT:
A semiconductor device includes a substrate (4) in a periphery of which are formed elements isolating regions. A bonding pad (3) is formed above the elements isolating region, with an isolation layer (7) provided therebetween. An underlying layer (12) having a buffering function is formed on a surface of the bonding pad and the semiconductor substrate. In one aspect of the invention, wherein the elements isolating region is formed of LOCOS film (30), the underlying layer is formed between the bonding pad and the LOCOS film. In another aspect of the invention, the elements isolating region is of a field-shield structure (13, 14), and the underlying layer (12) is formed by separating a part of a gate electrode layer (14) of the field shield into an island. The underlying layer buffers the structure against an external force that is applied on the bonding pad in a bonding processing, to thereby prevent generation of cracks in the semiconductor layer.
REFERENCES:
patent: 3772575 (1973-11-01), Hegarty et al.
patent: 4121240 (1978-10-01), Katto
patent: 4942450 (1990-07-01), Iwashita
patent: 4958222 (1990-09-01), Takakura et al.
patent: 5006913 (1991-04-01), Sugahara et al.
Kimura Hiroshi
Ozaki Hiroji
Satoh Shin-ichi
Tanaka Yoshinori
Wakamiya Wataru
Davenport T.
James Andrew J.
Mitsubishi Denki & Kabushiki Kaisha
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