Push-pull heterojunction bipolar transistor

Details Push-pull heterojunction bipolar transistor Push-pull heterojunction bipolar transistor

1991-02-20

1992-01-28

Wojciechowicz, Edward J.

357 16, 357 40, 357 55, H01L 2972

Patent

active

050847503

ABSTRACT:
A heterojunction bipolar, push-pull transistor includes a substrate, a first bipolar transistor region including a first collector layer, a first base layer and a first emitter layer disposed over said substrate and a second bipolar transistor region including a second collector layer, a second base layer and a second emitter layer disposed over said first bipolar transistor region. The transistor further includes a first base electrode coupled to said first and second base layers, a first emitter electrode coupled to said first and second emitter layers, and a first collector electrode coupled to said second collector layer.

REFERENCES:
patent: 4807008 (1989-02-01), Chang et al.
patent: 4868613 (1989-09-01), Hirachi
patent: 4939562 (1990-07-01), Adlerstein

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