Measurement of the mobile ion concentration in the oxide layer o

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

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324769, 437 8, 29838, G01R 3100

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057739897

ABSTRACT:
A method and apparatus for measuring the concentration of mobile ions in the oxide layer of a semiconductor wafer from the contact potential shift caused by ion drift across the oxide that includes depositing charge (e.g., using a corona discharge device) on the surface of the oxide and heating the wafer to allow mobile ions in the oxide (especially Na.sup.+) to drift. The difference in the contact potential measured before and after heating provides an indication of the mobile ion concentration in the oxide layer.

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