Sintered silicon nitride and production method thereof

Details Sintered silicon nitride and production method thereof Sintered silicon nitride and production method thereof

1991-05-23

1992-06-30

Bell, Mark L.

Compositions: ceramic

Ceramic compositions

Refractory

501 98, C04B 3558

Patent

active

051262940

ABSTRACT:
A sintered silicon nitride which comprises silicon nitride as a main component and having an oxygen content not more than 1% by weight and a bulk density not less than 95% of the theoretical density thereof. The sintered silicon nitride is produced as follows: Silicon powder and the oxide of at least one element selected from the group IIIb of a periodic table of the elements are mixed to obtain a mixture, in which the total amount of the oxide is not larger than 4% by weight of the mixture. The mixture of the silicon powder and the oxide is compacted to form a compact. The compact is nitrided in the atmosphere of nitrogen at a temperature of not higher than 1500.degree. C. to have a silicon remaining rate ranging from 2 to 20% by weight. Then, the compact is fired in the atmosphere of nitrogen at a pressure of not less than 1 atmospheric pressure and at a temperature ranging from 1800.degree. to 2200.degree. C. to obtain the sintered silicon nitride having a bulk density not less than 95% of the theoretical density thereof.

REFERENCES:
patent: 4341874 (1982-07-01), Nishida et al.
patent: 4716133 (1987-12-01), Horiuchi et al.

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