Method of making memory devices utilizing one-sided ozone teos s

Details Method of making memory devices utilizing one-sided ozone teos s Method of making memory devices utilizing one-sided ozone teos s

1991-09-11

1992-06-30

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437238, 437 48, 437 52, 437 50, 437228, H01L 2102, H01L 2170

Patent

active

051262908

ABSTRACT:
The present invention provides a programmable structure for a programmable read-only memory (PROM) which utilizes one-sided ozone spacers constructed on the digit lines as one time programmable nodes. An oxide
itride/oxide layer (ONO) is used as an interface between underlying parallel rows of digit lines, having one-sided ozone spacers, and overlying parallel columns of word lines in a programmable read only memory. With a each digit line passing under each word line in a row/column matrix is formed thereby providing a programmable digit/word line matrix. Each crossing point of the digit and word lines in the matrix will be permanently programmed to either a one or a zero by rupturing the thin ONO dielectric interface by applying the appropriate voltage potential between the associated digit/word line conductors.

REFERENCES:
patent: 4876220 (1989-10-01), Mohsen et al.
patent: 4981810 (1991-01-01), Fazan et al.
patent: 5017515 (1991-05-01), Gill
patent: 5053351 (1991-10-01), Fazan et al.
patent: 5084406 (1992-01-01), Rhodes et al.

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